Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and ...
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The 1N5711, 1N5712, 5082-2800/10/11 are passivated. Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage.
€95.00
1N5711 ; LOCATION. Manotoh Via Cristoforo Colombo 62020 Loro Piceno Italy. VAT: IT 02120040437 ; PRODUCTS. Active components Passive components Electro ...