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Learn about the features, specifications and applications of the 1N5400 series of general purpose plastic rectifiers from Vishay. This datasheet provides the primary characteristics, electrical characteristics, mechanical data and package information of the 1N5400 series.
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1N5400 is a lead mounted standard recovery rectifier designed for power supplies and other applications with high current, small size, low forward voltage drop and surge capability. The data sheet provides detailed information on the features, mechanical and electrical characteristics, ordering and mounting information, and thermal resistance of the device.
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Features. Diffused Junction. High Current Capability and Low Forward Voltage Drop. Surge Overload Rating to 200A Peak. Low Reverse Leakage Current. Lead Free Finish, RoHS Compliant (Note 3) Mechanical Data. Case: DO-201AD. Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0. Moisture Sensitivity: Level 1 per J-STD-020C.
A series of general purpose plastic rectifiers with low forward voltage drop, low leakage current, and high forward surge capability. Find datasheets, application notes, design tools, and more for these devices that are not AEC-Q101 qualified.
1N5400 thru 1N5408 Vishay General Semiconductor Note (1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted with 0.8" x 0.8" (20 mm x 20 mm) cop per heatsinks RATINGS AND CHARACTERISTICS CURVES (T A = 25 °C unless otherwise noted)
Axial-Lead Standard Recovery Rectifiers. Lead mounted standard recovery rectifiers are designed for use in power supplies and other applications having need of a device with the following features: High Current to Small Size. High Surge Current Capability.
This is a PDF document that contains the specifications and features of the 1N5400 axial rectifier, a standard general purpose rectifier with 3.0 ampere operation at 75°C. The document includes the absolute maximum ratings, electrical characteristics, thermal resistance, and operating junction temperature of the device.