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  1. 0809LD120 120 Watt, 28V, 1 GHz Ldmos FET . The is a common source N-Channel enhancement mode lateral MOSFET capable of providing 120 Watts of RF power from to 1 GHz. The device is nitride passivated and utilizes gold metallization to ensure high reliability and supreme ruggedness.. Power

  2. 0809LD120: Category: Discrete => Transistors => FETs (Field Effect Transistors) => DMOS (Double-diffused MOS) Title: RF Specific: Description: 120w, 28v, 1 GHZ Ldmos Fet: Company: Advanced Semiconductor, Inc. Quote

  3. 120 WATT, 28V, 1 GHz LDMOS FET, 0809LD120 Datasheet, 0809LD120 circuit, 0809LD120 data sheet : ETC1, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.

  4. 0809LD120 datasheet, cross reference, circuit and application notes in pdf format.

  5. 0809LD120: Descripción: 120 Watt / 28V / 1 Ghz LDMOS FET: Fabricantes: GHZ Technology Logotipo: Hay una vista previa y un enlace de descarga de 0809LD120 (archivo pdf) en la parte inferior de esta página.

  6. 0809LD120 : 120 Watt, 28V, 1 GHz Ldmos FET. PAL16H2AJ : Combinatorial Architectures. HC14193 : Breake Away Header .025(0.64mm) Square Posts. TCL300DA1-ACP2 : 6 and 12 Volt, 75 to 450 Watts Wet Cell Lead Calcium Battery

  7. TW-08-09-L-D-120-100 : available at OnlineComponents.com. Datasheets, competitive pricing, flat rate shipping & secure online ordering.