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Discrete Semiconductor Products  ·  Transistors (BJT) - Single
 
ZXTS1000NE6TA

- Additional photo

ZXTS1000NE6TA — TRANS PNP SW LOW SAT SOT23-6

ManufacturerDiodes/Zetex
Voltage - Collector Emitter Breakdown (Max)12V
Vce Saturation (Max) @ Ib, Ic40mV @ 10mA, 100mA
Current - Collector (Ic) (Max)1.25A
Current - Collector Cutoff (Max)10nA
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 10mA, 2V
Power - Max725mW
Frequency - Transition220MHz
Transistor TypePNP + Diode (Isolated)
Mounting TypeSurface Mount
Package / CaseSOT-23-6
Found under nameZXTS1000NE6TACT
Similar by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
ZXTS1000E6TCZXTS1000E6TCDiodes/ZetexTRANSISTOR/SCHOTTKY PNP SOT23-6
Voltage - Collector Emitter Breakdown (Max): 12V  ·  Vce Saturation (Max) @ Ib, Ic: 40mV @ 10mA, 100mA  ·  Current - Collector (Ic) (Max): 1.25A  ·  Current - Collector Cutoff (Max): 10nA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V  ·  Power - Max: 725mW  ·  Frequency - Transition: 220MHz  ·  Transistor Type: PNP  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-6
from 0,25Additional information
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ZXTS1000E6TAZXTS1000E6TADiodes/ZetexTRANS PNP/DIODE SCHOTTKY SOT23-6
Voltage - Collector Emitter Breakdown (Max): 12V  ·  Vce Saturation (Max) @ Ib, Ic: 40mV @ 10mA, 100mA  ·  Current - Collector (Ic) (Max): 1.25A  ·  Current - Collector Cutoff (Max): 10nA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V  ·  Power - Max: 725mW  ·  Frequency - Transition: 220MHz  ·  Transistor Type: PNP  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-6
from 0,19
from 0,23		Additional information
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