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Discrete Semiconductor Products  ·  Transistors (BJT) - Single
 

TN2907A_D26Z — TRANS BIPO GPA PNP 60V TO-226

ManufacturerFairchild Semiconductor
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector (Ic) (Max)800mA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Power - Max625mW
Transistor TypePNP
Mounting TypeThrough Hole
Package / CaseTO-92-3 (Long Body), TO-226
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
TN2907AFairchild SemiconductorTRANS GP PNP 60V 800MA TO-226
Voltage - Collector Emitter Breakdown (Max): 60V  ·  Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA  ·  Current - Collector (Ic) (Max): 800mA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V  ·  Power - Max: 625mW  ·  Transistor Type: PNP  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Long Body), TO-226
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