Discrete Semiconductor Products · Transistors (BJT) - Single

Manufacturer	ON Semiconductor
Harmful substances	RoHS Lead-free

Voltage - Collector Emitter Breakdown (Max)	260V
Vce Saturation (Max) @ Ib, Ic	3V @ 1A, 10A
Current - Collector (Ic) (Max)	15A
DC Current Gain (hFE) (Min) @ Ic, Vce	75 @ 500mA, 5V
Power - Max	200W
Frequency - Transition	30MHz
Transistor Type	PNP
Mounting Type	Through Hole
Package / Case	TO-264-5

Photo	Name	Manufacturer	Technical parameters	Prices (rub.)	Buy
	NJL1302D	ON Semiconductor	TRANS BIPO PNP 200W 260V TO-264 Voltage - Collector Emitter Breakdown (Max): 260V · Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A · Current - Collector (Ic) (Max): 15A · DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 500mA, 5V · Power - Max: 200W · Frequency - Transition: 30MHz · Transistor Type: PNP · Mounting Type: Through Hole · Package / Case: TO-264-5	from 2,27 from 5,00	Additional information Find at suppliers

Photo	Name	Manufacturer	Technical parameters	Prices (rub.)	Buy
	NJL3281DG	ON Semiconductor	TRANS BIPO NPN 200W 260V TO-264 Voltage - Collector Emitter Breakdown (Max): 260V · Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A · Current - Collector (Ic) (Max): 15A · DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 500mA, 5V · Power - Max: 200W · Frequency - Transition: 30MHz · Transistor Type: NPN · Mounting Type: Through Hole · Package / Case: TO-264-5	from 2,43 from 5,04	Additional information Find at suppliers
	NJL3281D	ON Semiconductor	TRANS BIPO NPN 200W 260V TO-264 Voltage - Collector Emitter Breakdown (Max): 260V · Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A · Current - Collector (Ic) (Max): 15A · DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 500mA, 5V · Power - Max: 200W · Frequency - Transition: 30MHz · Transistor Type: NPN · Mounting Type: Through Hole · Package / Case: TO-264-5		Additional information Find at suppliers

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