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Discrete Semiconductor Products  ·  Transistors (BJT) - Single
 
MMBT5551-7

MMBT5551-7 — TRANS 160V 350MW NPN SMD SOT23-3

ManufacturerDiodes Inc
Voltage - Collector Emitter Breakdown (Max)160V
Vce Saturation (Max) @ Ib, Ic200mV @ 5mA, 50mA
Current - Collector (Ic) (Max)600mA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Power - Max300mW
Frequency - Transition300MHz
Transistor TypeNPN
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Found under nameMMBT5551, MMBT5551-7DITR, MMBT5551DITR, MMBT5551DITR-ND, MMBT5551TR, MMBT5551TR-ND
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
MMBT5551-7-FMMBT5551-7-FDiodes IncTRANS NPN 160V 350MW SMD SOT23-3
Voltage - Collector Emitter Breakdown (Max): 160V  ·  Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA  ·  Current - Collector (Ic) (Max): 600mA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V  ·  Power - Max: 300mW  ·  Frequency - Transition: 300MHz  ·  Transistor Type: NPN  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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from 0,37		Additional information
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