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Discrete Semiconductor Products  ·  Transistors (BJT) - Single
 
2N4401G

- Dimensional Drawing

2N4401G — TRANS SS NPN GP 40V 600MA TO-92

ManufacturerON Semiconductor
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)40V
Vce Saturation (Max) @ Ib, Ic400mV @ 15mA, 150mA
Current - Collector (Ic) (Max)600mA
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 1V
Power - Max625mW
Frequency - Transition250MHz
Transistor TypeNPN
Mounting TypeThrough Hole
Package / CaseTO-92-3 (Standard Body), TO-226
Found under name2N4401G-ND, 2N4401GOS
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
2N4401RLRAG2N4401RLRAGON SemiconductorTRANS NPN GP SS 600MA 40V TO92
Voltage - Collector Emitter Breakdown (Max): 40V  ·  Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA  ·  Current - Collector (Ic) (Max): 600mA  ·  Current - Collector Cutoff (Max): 100nA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V  ·  Power - Max: 625mW  ·  Frequency - Transition: 250MHz  ·  Transistor Type: NPN  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
from 0,02
from 0,04		Additional information
Find at suppliers
2N4401RLRPG2N4401RLRPGON SemiconductorTRANS SS NPN GP 40V 600MA TO-92
Voltage - Collector Emitter Breakdown (Max): 40V  ·  Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA  ·  Current - Collector (Ic) (Max): 600mA  ·  Current - Collector Cutoff (Max): 100nA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V  ·  Power - Max: 625mW  ·  Frequency - Transition: 250MHz  ·  Transistor Type: NPN  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
from 0,04
from 0,36		Additional information
Find at suppliers
2N4401RLRM2N4401RLRMON SemiconductorTRANS SS NPN GP 40V 600MA TO-92
Voltage - Collector Emitter Breakdown (Max): 40V  ·  Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA  ·  Current - Collector (Ic) (Max): 600mA  ·  Current - Collector Cutoff (Max): 100nA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V  ·  Power - Max: 625mW  ·  Frequency - Transition: 250MHz  ·  Transistor Type: NPN  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
Additional information
Find at suppliers
2N4401RLRMG2N4401RLRMGON SemiconductorTRANS SS NPN GP 40V 600MA TO-92
Voltage - Collector Emitter Breakdown (Max): 40V  ·  Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA  ·  Current - Collector (Ic) (Max): 600mA  ·  Current - Collector Cutoff (Max): 100nA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V  ·  Power - Max: 625mW  ·  Frequency - Transition: 250MHz  ·  Transistor Type: NPN  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
Additional information
Find at suppliers

Similar by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
2N4401RLRA2N4401RLRAON SemiconductorTRANS NPN SS GP 600MA 40V TO92
Voltage - Collector Emitter Breakdown (Max): 40V  ·  Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA  ·  Current - Collector (Ic) (Max): 600mA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V  ·  Power - Max: 625mW  ·  Frequency - Transition: 250MHz  ·  Transistor Type: NPN  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
Additional information
Find at suppliers

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