Discrete Semiconductor Products  ·  Transistors (BJT) - Single

2N3439 — TRANSISTOR NPN 350V 1A TO39

Manufacturer	Microsemi
Voltage - Collector Emitter Breakdown (Max)	350V
Vce Saturation (Max) @ Ib, Ic	500mV @ 4mA, 50mA
Current - Collector (Ic) (Max)	1A
Current - Collector Cutoff (Max)	2µA
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 5mA, 10V
Power - Max	10W
Transistor Type	NPN
Mounting Type	Through Hole
Package / Case	TO-39
Found under name	Q1272712