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Discrete Semiconductor Products  ·  Transistors (BJT) - Single, Pre-Biased

 
UNR92A5G0L

- Dimensional Drawing

UNR92A5G0L — TRANS NPN W/RES 160HFE SSMINI 3P

ManufacturerPanasonic - SSG
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)10K
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector (Ic) (Max)80mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition150MHz
Power - Max125mW
Transistor TypeNPN - Pre-Biased
Mounting TypeSurface Mount
Package / CaseSS Mini 3P
Found under nameUNR92A5G0LDKR
Similar by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
UNR92A6G0LPanasonic - SSGTRANS NPN W/RES 160HFE SSMINI 3P
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 4.7K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 80mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Frequency - Transition: 150MHz  ·  Power - Max: 125mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SS Mini 3P
from 0,08
from 0,37
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UNR92A0G0LUNR92A0G0LPanasonic - SSGTRANS NPN W/RES 160HFE SSMINI 3P
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 80mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Frequency - Transition: 150MHz  ·  Power - Max: 125mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SS Mini 3P
from 0,05
from 0,07
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UNR9215J0LUNR9215J0LPanasonic - SSGTRANS NPN W/RES 160HFE SSMINI 3P
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Frequency - Transition: 150MHz  ·  Power - Max: 125mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SS Mini 3P
from 0,09
from 0,40
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UNR92A4G0LUNR92A4G0LPanasonic - SSGTRANS NPN W/RES 80HFE SS-MINI 3P
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 80mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Frequency - Transition: 150MHz  ·  Power - Max: 125mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SS Mini 3P
from 0,08
from 0,37
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UNR92A1G0LUNR92A1G0LPanasonic - SSGTRANS NPN W/RES 35HFE SS-MINI 3P
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  Resistor - Emitter Base (R2) (Ohms): 10K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 80mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Frequency - Transition: 150MHz  ·  Power - Max: 125mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SS Mini 3P
from 0,08
from 0,37
Additional information
Find at suppliers
UNR9215G0LUNR9215G0LPanasonic - SSGTRANS NPN W/RES 160HFE SSMINI 3P
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Frequency - Transition: 150MHz  ·  Power - Max: 125mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SS Mini 3P
from 0,08
from 0,37
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