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Discrete Semiconductor Products  ·  Transistors (BJT) - Single, Pre-Biased
 
UNR521500L

- Dimensional Drawing

UNR521500L — TRANS NPN W/RES 160HFE S-MINI 3P

ManufacturerPanasonic - SSG
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)10K
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector (Ic) (Max)100mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition150MHz
Power - Max150mW
Transistor TypePNP - Pre-Biased
Mounting TypeSurface Mount
Package / CaseS-Mini 3P
Found under nameUN5215, UN5215CT, UN5215CT-ND, UNR521500LCT
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Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Frequency - Transition: 80MHz  ·  Power - Max: 150mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: S-Mini 3P
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Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Frequency - Transition: 80MHz  ·  Power - Max: 150mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: S-Mini 3P
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Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Frequency - Transition: 150MHz  ·  Power - Max: 150mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: S-Mini 3P
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Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 4.7K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Frequency - Transition: 150MHz  ·  Power - Max: 150mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: S-Mini 3P
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