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Discrete Semiconductor Products  ·  Transistors (BJT) - Single, Pre-Biased
 
UNR51AVG0L

UNR51AVG0L — TRANS PNP W/RES 6HFE S-MINI 3P

ManufacturerPanasonic - SSG
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)2.2K
Resistor - Emitter Base (R2) (Ohms)2.2K
DC Current Gain (hFE) (Min) @ Ic, Vce6 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 1.5mA, 10mA
Current - Collector (Ic) (Max)80mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition80MHz
Power - Max150mW
Transistor TypePNP - Pre-Biased
Mounting TypeSurface Mount
Package / CaseS-Mini 3P
Found under nameUNR51AVG0LDKR
Similar by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
UNR511V00LUNR511V00LPanasonic - SSGTRANS PNP W/RES 6 HFE S-MINI 3P
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 2.2K  ·  Resistor - Emitter Base (R2) (Ohms): 2.2K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 1.5mA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Frequency - Transition: 80MHz  ·  Power - Max: 150mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: S-Mini 3P
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