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Discrete Semiconductor Products  ·  Transistors (BJT) - Single, Pre-Biased
 
PDTA114TT,215

PDTA114TT,215 — TRANS PNP 50V 100MA SOT23

ManufacturerNXP Semiconductors
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)10K
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic150mV @ 500µA, 10mA
Current - Collector (Ic) (Max)100mA
Current - Collector Cutoff (Max)1µA
Power - Max250mW
Transistor TypePNP - Pre-Biased
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Found under namePDTA114TT T/R, PDTA114TT T/R-ND
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
PDTC114TT,235PDTC114TT,235NXP SemiconductorsTRANS PNP 50V 100MA SOT23
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 1µA  ·  Power - Max: 250mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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PDTC114TT,215PDTC114TT,215NXP SemiconductorsTRANS PNP 50V 100MA SOT23
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 1µA  ·  Power - Max: 250mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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Similar by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
PDTA114TK,115PDTA114TK,115NXP SemiconductorsTRANS PNP 50V 100MA SOT346
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 1µA  ·  Power - Max: 250mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-59-3, SMT3, SOT-346, TO-236
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PDTA114TM,315PDTA114TM,315NXP SemiconductorsTRANS PNP W/RES 50V SOT-883
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 1µA  ·  Power - Max: 250mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-101, SOT-883
from 0,04Additional information
Find at suppliers
PDTC114TK,115PDTC114TK,115NXP SemiconductorsTRANS PNP 50V 100MA SOT346
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 1µA  ·  Power - Max: 250mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-59-3, SMT3, SOT-346, TO-236
Additional information
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PDTA114ET,235NXP SemiconductorsTRANS PNP W/RESISTOR SOT-23
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  Resistor - Emitter Base (R2) (Ohms): 10K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 1µA  ·  Power - Max: 250mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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PDTA114ET,215PDTA114ET,215NXP SemiconductorsTRANS PNP W/RES 50V SOT-23
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  Resistor - Emitter Base (R2) (Ohms): 10K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 1µA  ·  Power - Max: 250mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
from 0,02Additional information
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PDTA114TK,135PDTA114TK,135NXP SemiconductorsTRANS PNP W/RES 50V SOT-346
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 1µA  ·  Power - Max: 250mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-59-3, SMT3, SOT-346, TO-236
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