Discrete Semiconductor Products · Transistors (BJT) - Single, Pre-Biased

Manufacturer	ON Semiconductor
Harmful substances	RoHS Lead-free

Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	22K
Resistor - Emitter Base (R2) (Ohms)	22K
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Current - Collector (Ic) (Max)	100mA
Current - Collector Cutoff (Max)	500nA
Power - Max	338mW
Transistor Type	PNP - Pre-Biased
Mounting Type	Surface Mount
Package / Case	SC-59-3, SMT3, SOT-346, TO-236

Photo	Name	Manufacturer	Technical parameters	Prices (rub.)	Buy
	MUN2212T1	ON Semiconductor	TRANS BRT NPN 100MA 50V SC59 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 22K · Resistor - Emitter Base (R2) (Ohms): 22K · DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V · Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA · Current - Collector (Ic) (Max): 100mA · Current - Collector Cutoff (Max): 500nA · Power - Max: 338mW · Transistor Type: NPN - Pre-Biased · Mounting Type: Surface Mount · Package / Case: SC-59-3, SMT3, SOT-346, TO-236	from 0,07	Additional information Find at suppliers
	MUN2212T1G	ON Semiconductor	TRANS BRT NPN 100MA 50V SC59 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 22K · Resistor - Emitter Base (R2) (Ohms): 22K · DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V · Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA · Current - Collector (Ic) (Max): 100mA · Current - Collector Cutoff (Max): 500nA · Power - Max: 338mW · Transistor Type: NPN - Pre-Biased · Mounting Type: Surface Mount · Package / Case: SC-59-3, SMT3, SOT-346, TO-236	from 0,02	Additional information Find at suppliers

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