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Discrete Semiconductor Products  ·  Transistors (BJT) - Single, Pre-Biased
 
DTD114GKT146

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DTD114GKT146 — TRANS NPN 50V 500MA SOT-346

ManufacturerRohm Semiconductor
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)10K
DC Current Gain (hFE) (Min) @ Ic, Vce56 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA
Current - Collector (Ic) (Max)500mA
Frequency - Transition200MHz
Power - Max200mW
Transistor TypeNPN - Pre-Biased
Mounting TypeSurface Mount
Package / CaseSC-59-3, SMT3, SOT-346, TO-236
Found under nameDTD114GKT146CT
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
DTD114EKT146DTD114EKT146Rohm SemiconductorTRAN DIGIT NPN 50V 500MA SOT-346
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  Resistor - Emitter Base (R2) (Ohms): 10K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA  ·  Current - Collector (Ic) (Max): 500mA  ·  Frequency - Transition: 200MHz  ·  Power - Max: 200mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-59-3, SMT3, SOT-346, TO-236
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from 0,40		Additional information
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Similar by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
DTB114EKT146DTB114EKT146Rohm SemiconductorTRANS PNP 50V 500MA SOT-346
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  Resistor - Emitter Base (R2) (Ohms): 10K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA  ·  Current - Collector (Ic) (Max): 500mA  ·  Frequency - Transition: 200MHz  ·  Power - Max: 200mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-59-3, SMT3, SOT-346, TO-236
from 0,11
from 0,40		Additional information
Find at suppliers
DTD133HKT146Rohm SemiconductorTRANS NPN 50V 500MA SOT-346 TR
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 3.3K  ·  Resistor - Emitter Base (R2) (Ohms): 1.1K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA  ·  Current - Collector (Ic) (Max): 500mA  ·  Frequency - Transition: 200MHz  ·  Power - Max: 200mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-59-3, SMT3, SOT-346, TO-236
from 0,13Additional information
Find at suppliers
DTD123YKT146DTD123YKT146Rohm SemiconductorTRAN DIGIT NPN 50V 500MA SOT-346
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 2.2K  ·  Resistor - Emitter Base (R2) (Ohms): 489  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA  ·  Current - Collector (Ic) (Max): 500mA  ·  Frequency - Transition: 200MHz  ·  Power - Max: 200mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-59-3, SMT3, SOT-346, TO-236
from 0,11
from 0,40		Additional information
Find at suppliers
DTB114GKT146DTB114GKT146Rohm SemiconductorTRANS PNP 50V 500MA SOT-346
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA  ·  Current - Collector (Ic) (Max): 500mA  ·  Frequency - Transition: 200MHz  ·  Power - Max: 200mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-59-3, SMT3, SOT-346, TO-236
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from 0,13		Additional information
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