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Photo | Name | Manufacturer | Technical parameters | Prices (rub.) | Buy |
DTC115TMT2L | Rohm Semiconductor | SMALL SIGNAL SURFACE-MT SILICON Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 100K · DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V · Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA · Current - Collector (Ic) (Max): 100mA · Frequency - Transition: 250MHz · Power - Max: 150mW · Transistor Type: NPN - Pre-Biased · Mounting Type: Surface Mount · Package / Case: VMT3 | from 0,06 | Additional information Find at suppliers |
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