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Photo | Name | Manufacturer | Technical parameters | Prices (rub.) | Buy |
DTB113ZSTP | Rohm Semiconductor | TRANSISTOR PNP 50V 500MA SPT TB Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 1K · Resistor - Emitter Base (R2) (Ohms): 10K · DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V · Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA · Current - Collector (Ic) (Max): 500mA · Frequency - Transition: 200MHz · Power - Max: 300mW · Transistor Type: PNP - Pre-Biased · Mounting Type: Through Hole · Package / Case: SC-72-3, SPT | from 0,10 | Additional information Find at suppliers | |
DTD114ESTP | Rohm Semiconductor | TRANSISTOR NPN 50V 500MA SPT TB Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 10K · Resistor - Emitter Base (R2) (Ohms): 10K · DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V · Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA · Current - Collector (Ic) (Max): 500mA · Frequency - Transition: 200MHz · Power - Max: 300mW · Transistor Type: NPN - Pre-Biased · Mounting Type: Through Hole · Package / Case: SC-72-3, SPT | from 0,10 | Additional information Find at suppliers |
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