Discrete Semiconductor Products · Transistors (BJT) - Single, Pre-Biased

Manufacturer	Diodes Inc
Harmful substances	RoHS Lead-free
Pay attention	Encapsulate Change 15/May/2008

Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	2.2K
Resistor - Emitter Base (R2) (Ohms)	2.2K
DC Current Gain (hFE) (Min) @ Ic, Vce	39 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Current - Collector (Ic) (Max)	500mA
Frequency - Transition	200MHz
Power - Max	200mW
Transistor Type	PNP - Pre-Biased
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3

Photo	Name	Manufacturer	Technical parameters	Prices (rub.)	Buy
	DDTB123EU-7-F	Diodes Inc	TRANS PREB PNP 200MW R1/2 SC70-3 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 2.2K · Resistor - Emitter Base (R2) (Ohms): 2.2K · DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V · Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA · Current - Collector (Ic) (Max): 500mA · Frequency - Transition: 200MHz · Power - Max: 200mW · Transistor Type: PNP - Pre-Biased · Mounting Type: Surface Mount · Package / Case: SC-70-3, SOT-323-3	from 0,06	Additional information Find at suppliers
	DDTD123EC-7-F	Diodes Inc	TRANS NPN 200MW R1/R2 SOT23-3 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 2.2K · Resistor - Emitter Base (R2) (Ohms): 2.2K · DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V · Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA · Current - Collector (Ic) (Max): 500mA · Frequency - Transition: 200MHz · Power - Max: 200mW · Transistor Type: NPN - Pre-Biased · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	from 0,05	Additional information Find at suppliers

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