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Discrete Semiconductor Products  ·  Transistors (BJT) - Single, Pre-Biased
 
DDTA115EUA-7-F

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DDTA115EUA-7-F — TRANS PREBIAS PNP 200MW SC70-3

ManufacturerDiodes Inc
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)100K
Resistor - Emitter Base (R2) (Ohms)100K
DC Current Gain (hFE) (Min) @ Ic, Vce82 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector (Ic) (Max)100mA
Frequency - Transition250MHz
Power - Max200mW
Transistor TypePNP - Pre-Biased
Mounting TypeSurface Mount
Package / CaseSC-70-3, SOT-323-3
Found under nameDDTA115EUA-FDICT
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
DDTA115EUA-7DDTA115EUA-7Diodes IncTRANS PREBIAS PNP 200MW SC70-3
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 100K  ·  Resistor - Emitter Base (R2) (Ohms): 100K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Frequency - Transition: 250MHz  ·  Power - Max: 200mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-3, SOT-323-3
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from 0,41		Additional information
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DDTA115ECA-7-FDDTA115ECA-7-FDiodes IncTRANS PREBIAS PNP 200MW SOT23-3
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 100K  ·  Resistor - Emitter Base (R2) (Ohms): 100K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Frequency - Transition: 250MHz  ·  Power - Max: 200mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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from 0,09		Additional information
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DDTC115EUA-7-FDDTC115EUA-7-FDiodes IncTRANS PREBIAS NPN 200MW SC70-3
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 100K  ·  Resistor - Emitter Base (R2) (Ohms): 100K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Frequency - Transition: 250MHz  ·  Power - Max: 200mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-3, SOT-323-3
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DDTA115EKA-7-FDiodes IncTRANS PNP 200MW R1/R2 SC59-3
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 100K  ·  Resistor - Emitter Base (R2) (Ohms): 100K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Frequency - Transition: 250MHz  ·  Power - Max: 200mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-59-3, SMT3, SOT-346, TO-236
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DTA115EUAT106DTA115EUAT106Rohm SemiconductorTRANS PNP 50V 100MA SOT-323
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 100K  ·  Resistor - Emitter Base (R2) (Ohms): 100K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Frequency - Transition: 250MHz  ·  Power - Max: 200mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-3, SOT-323-3
from 0,09
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DDTC115EUA-7DDTC115EUA-7Diodes IncTRANS PREBIAS NPN 200MW SC70-3
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 100K  ·  Resistor - Emitter Base (R2) (Ohms): 100K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Frequency - Transition: 250MHz  ·  Power - Max: 200mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-3, SOT-323-3
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DDTA115ECA-7DDTA115ECA-7Diodes IncTRANS PREBIAS PNP 200MW SOT23-3
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 100K  ·  Resistor - Emitter Base (R2) (Ohms): 100K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Frequency - Transition: 250MHz  ·  Power - Max: 200mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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