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Discrete Semiconductor Products  ·  Transistors (BJT) - Single, Pre-Biased
 

DDTA114EE-7-F — TRANS PREB PNP 150MW R1/2 SOT523

ManufacturerDiodes Inc
Harmful substancesRoHS   Lead-free
Pay attentionEncapsulate Change 09/July/2007
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)10K
Resistor - Emitter Base (R2) (Ohms)10K
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector (Ic) (Max)50mA
Frequency - Transition250MHz
Power - Max150mW
Transistor TypePNP - Pre-Biased
Mounting TypeSurface Mount
Package / CaseSOT-523
Similar by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
DDTC114EE-7-FDDTC114EE-7-FDiodes IncTRANS PREBIASED NPN 150MW SOT523
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  Resistor - Emitter Base (R2) (Ohms): 10K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 50mA  ·  Frequency - Transition: 250MHz  ·  Power - Max: 150mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-523
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