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Photo | Name | Manufacturer | Technical parameters | Prices (rub.) | Buy |
BCR 555 E6433 | Infineon Technologies | TRANSISTOR PNP DGTL AF SOT-23 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 2.2K · Resistor - Emitter Base (R2) (Ohms): 10K · DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V · Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA · Current - Collector (Ic) (Max): 500mA · Frequency - Transition: 150MHz · Power - Max: 330mW · Transistor Type: PNP - Pre-Biased · Mounting Type: Surface Mount · Package / Case: SOT-23 | from 0,05 | Additional information Find at suppliers | |
BCR 573 E6327 | Infineon Technologies | TRANSISTOR PNP DGTL AF SOT-23 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 1K · Resistor - Emitter Base (R2) (Ohms): 10K · DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V · Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA · Current - Collector (Ic) (Max): 500mA · Frequency - Transition: 150MHz · Power - Max: 330mW · Transistor Type: PNP - Pre-Biased · Mounting Type: Surface Mount · Package / Case: SOT-23 | from 0,05 | Additional information Find at suppliers | |
BCR 573 E6433 | Infineon Technologies | TRANSISTOR PNP DGTL AF SOT-23 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 1K · Resistor - Emitter Base (R2) (Ohms): 10K · DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V · Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA · Current - Collector (Ic) (Max): 500mA · Frequency - Transition: 150MHz · Power - Max: 330mW · Transistor Type: PNP - Pre-Biased · Mounting Type: Surface Mount · Package / Case: SOT-23 | from 0,05 | Additional information Find at suppliers | |
BCR 553 E6327 | Infineon Technologies | TRANSISTOR PNP DGTL AF SOT-23 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 10K · Resistor - Emitter Base (R2) (Ohms): 10K · DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V · Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA · Current - Collector (Ic) (Max): 500mA · Frequency - Transition: 100MHz · Power - Max: 330mW · Transistor Type: PNP - Pre-Biased · Mounting Type: Surface Mount · Package / Case: SOT-23 | from 0,05 | Additional information Find at suppliers | |
BCR 555 E6327 | Infineon Technologies | TRANSISTOR PNP DGTL AF SOT-23 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 2.2K · Resistor - Emitter Base (R2) (Ohms): 10K · DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V · Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA · Current - Collector (Ic) (Max): 500mA · Frequency - Transition: 150MHz · Power - Max: 330mW · Transistor Type: PNP - Pre-Biased · Mounting Type: Surface Mount · Package / Case: SOT-23 | from 0,05 | Additional information Find at suppliers |
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