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Discrete Semiconductor Products  ·  Transistors (BJT) - Single, Pre-Biased
 

BCR 573 E6433 — TRANSISTOR PNP DGTL AF SOT-23

ManufacturerInfineon Technologies
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)1K
Resistor - Emitter Base (R2) (Ohms)10K
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA
Current - Collector (Ic) (Max)500mA
Frequency - Transition150MHz
Power - Max330mW
Transistor TypePNP - Pre-Biased
Mounting TypeSurface Mount
Package / CaseSOT-23
Found under nameBCR573E6433XT, SP000010860
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
BCR 573 E6327Infineon TechnologiesTRANSISTOR PNP DGTL AF SOT-23
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 1K  ·  Resistor - Emitter Base (R2) (Ohms): 10K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA  ·  Current - Collector (Ic) (Max): 500mA  ·  Frequency - Transition: 150MHz  ·  Power - Max: 330mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23
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Similar by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
BCR 583 E6327Infineon TechnologiesTRANSISTOR PNP DGTL AF SOT-23
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  Resistor - Emitter Base (R2) (Ohms): 10K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA  ·  Current - Collector (Ic) (Max): 500mA  ·  Frequency - Transition: 150MHz  ·  Power - Max: 330mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23
from 0,05Additional information
Find at suppliers
BCR 555 E6327Infineon TechnologiesTRANSISTOR PNP DGTL AF SOT-23
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 2.2K  ·  Resistor - Emitter Base (R2) (Ohms): 10K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA  ·  Current - Collector (Ic) (Max): 500mA  ·  Frequency - Transition: 150MHz  ·  Power - Max: 330mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23
from 0,05Additional information
Find at suppliers
BCR 555 E6433Infineon TechnologiesTRANSISTOR PNP DGTL AF SOT-23
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 2.2K  ·  Resistor - Emitter Base (R2) (Ohms): 10K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA  ·  Current - Collector (Ic) (Max): 500mA  ·  Frequency - Transition: 150MHz  ·  Power - Max: 330mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23
from 0,05Additional information
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