Discrete Semiconductor Products · Transistors (BJT) - Single, Pre-Biased

Manufacturer	Infineon Technologies
Harmful substances	RoHS Lead-free

Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	4.7K
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Current - Collector (Ic) (Max)	500mA
Frequency - Transition	150MHz
Power - Max	330mW
Transistor Type	PNP - Pre-Biased
Mounting Type	Surface Mount
Package / Case	SOT-23
Found under name	BCR569E6327XT, SP000015053

Photo	Name	Manufacturer	Technical parameters	Prices (rub.)	Buy
	BCR 562 E6327	Infineon Technologies	TRANSISTOR PNP DGTL AF SOT-23 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 4.7K · Resistor - Emitter Base (R2) (Ohms): 4.7K · DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V · Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA · Current - Collector (Ic) (Max): 500mA · Frequency - Transition: 150MHz · Power - Max: 330mW · Transistor Type: PNP - Pre-Biased · Mounting Type: Surface Mount · Package / Case: SOT-23	from 0,05	Additional information Find at suppliers

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