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BCR 562 E6327 — TRANSISTOR PNP DGTL AF SOT-23
| Manufacturer | Infineon Technologies |
| Harmful substances |  RoHS  Lead-free |
 | | Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) (Ohms) | 4.7K |
| Resistor - Emitter Base (R2) (Ohms) | 4.7K |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 50mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector (Ic) (Max) | 500mA |
| Frequency - Transition | 150MHz |
| Power - Max | 330mW |
| Transistor Type | PNP - Pre-Biased |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23 |
| Found under name | BCR562E6327XT, SP000010859 |
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