| BCR 512 B6327 | Infineon Technologies | TRANSISTOR NPN DGTL AF SOT-23 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 4.7K · Resistor - Emitter Base (R2) (Ohms): 4.7K · DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V · Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA · Current - Collector (Ic) (Max): 500mA · Frequency - Transition: 100MHz · Power - Max: 330mW · Transistor Type: NPN - Pre-Biased · Mounting Type: Surface Mount · Package / Case: SOT-23 | from 0,04 | Additional information Find at suppliers |