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Discrete Semiconductor Products  ·  Transistors (BJT) - Single, Pre-Biased
 
BCR 198W E6327

BCR 198W E6327 — TRANSISTOR PNP DIGITAL SOT-323

ManufacturerInfineon Technologies
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)47K
Resistor - Emitter Base (R2) (Ohms)47K
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector (Ic) (Max)70mA
Frequency - Transition190MHz
Power - Max250mW
Transistor TypePNP - Pre-Biased
Mounting TypeSurface Mount
Package / CaseSOT-323
Found under nameBCR198WE6327, BCR198WE6327XT, SP000010824
Similar by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
BCR 198T E6327Infineon TechnologiesTRANSISTOR PNP DGTL AF SC-75
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 47K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 70mA  ·  Frequency - Transition: 190MHz  ·  Power - Max: 250mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-75
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BCR 198F E6327Infineon TechnologiesTRANSISTOR PNP DGTL AF TSFP-3
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 47K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 70mA  ·  Frequency - Transition: 190MHz  ·  Power - Max: 250mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: TSFP-3
Additional information
Find at suppliers
BCR 198L3 E6327Infineon TechnologiesTRANSISTOR PNP DGTL AF TSLP-3
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 47K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 70mA  ·  Frequency - Transition: 190MHz  ·  Power - Max: 250mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: TSLP-3-4
Additional information
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