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Photo | Name | Manufacturer | Technical parameters | Prices (rub.) | Buy |
BCR 166 B6327 | Infineon Technologies | TRANSISTOR PNP DGTL AF SOT-23 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 4.7K · Resistor - Emitter Base (R2) (Ohms): 47K · DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V · Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA · Current - Collector (Ic) (Max): 100mA · Frequency - Transition: 160MHz · Power - Max: 200mW · Transistor Type: PNP - Pre-Biased · Mounting Type: Surface Mount · Package / Case: SOT-23 | from 0,02 | Additional information Find at suppliers | |
BCR 166 E6327 | Infineon Technologies | TRANSISTOR PNP DGTL AF SOT-23 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 4.7K · Resistor - Emitter Base (R2) (Ohms): 47K · DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V · Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA · Current - Collector (Ic) (Max): 100mA · Frequency - Transition: 160MHz · Power - Max: 200mW · Transistor Type: PNP - Pre-Biased · Mounting Type: Surface Mount · Package / Case: SOT-23 | from 0,02 | Additional information Find at suppliers |
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