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Discrete Semiconductor Products  ·  Transistors (BJT) - Single, Pre-Biased
 

BCR 114L3 E6327 — TRANSISTOR NPN DGTL AF TSFP-3

ManufacturerInfineon Technologies
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)4.7K
Resistor - Emitter Base (R2) (Ohms)10K
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector (Ic) (Max)100mA
Frequency - Transition160MHz
Power - Max250mW
Transistor TypeNPN - Pre-Biased
Mounting TypeSurface Mount
Package / CaseTSFP-3
Found under nameBCR114L3E6327XT, SP000014851
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
BCR 114F E6327Infineon TechnologiesTRANSISTOR NPN DGTL AF TSFP-3
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 4.7K  ·  Resistor - Emitter Base (R2) (Ohms): 10K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Frequency - Transition: 160MHz  ·  Power - Max: 250mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: TSFP-3
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Similar by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
BCR 164F E6327Infineon TechnologiesTRANSISTOR PNP DGTL AF TSFP-3
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 4.7K  ·  Resistor - Emitter Base (R2) (Ohms): 10K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Frequency - Transition: 160MHz  ·  Power - Max: 250mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: TSFP-3
Additional information
Find at suppliers
BCR 114T E6327Infineon TechnologiesTRANSISTOR NPN DGTL AF SC-75
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 4.7K  ·  Resistor - Emitter Base (R2) (Ohms): 10K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Frequency - Transition: 160MHz  ·  Power - Max: 250mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-75
Additional information
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