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Discrete Semiconductor Products  ·  Transistors (BJT) - Single, Pre-Biased
 

BCR 112T E6327 — TRANSISTOR NPN DGTL AF SC-75

ManufacturerInfineon Technologies
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)4.7K
Resistor - Emitter Base (R2) (Ohms)4.7K
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector (Ic) (Max)100mA
Frequency - Transition140MHz
Power - Max250mW
Transistor TypeNPN - Pre-Biased
Mounting TypeSurface Mount
Package / CaseSC-75
Found under nameBCR112TE6327XT, SP000014126
Similar by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
BCR 112F E6327Infineon TechnologiesTRANSISTOR NPN DGTL AF TSFP-3
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 4.7K  ·  Resistor - Emitter Base (R2) (Ohms): 4.7K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Frequency - Transition: 140MHz  ·  Power - Max: 250mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: TSFP-3
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BCR 112L3 E6327Infineon TechnologiesTRANSISTOR NPN DGTL AF TSLP-3
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 4.7K  ·  Resistor - Emitter Base (R2) (Ohms): 4.7K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Frequency - Transition: 140MHz  ·  Power - Max: 250mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: TSLP-3-4
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BCR 112W E6327BCR 112W E6327Infineon TechnologiesTRANSISTOR NPN DIGITAL SOT-323
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 4.7K  ·  Resistor - Emitter Base (R2) (Ohms): 4.7K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Frequency - Transition: 140MHz  ·  Power - Max: 250mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-323
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