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Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
BCR 112L3 E6327 | Infineon Technologies | TRANSISTOR NPN DGTL AF TSLP-3 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 4.7K · Resistor - Emitter Base (R2) (Ohms): 4.7K · DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V · Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA · Current - Collector (Ic) (Max): 100mA · Frequency - Transition: 140MHz · Power - Max: 250mW · Transistor Type: NPN - Pre-Biased · Mounting Type: Surface Mount · Package / Case: TSLP-3-4 | Доп. информация Искать в поставщиках | ||
BCR 112W E6327 | Infineon Technologies | TRANSISTOR NPN DIGITAL SOT-323 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 4.7K · Resistor - Emitter Base (R2) (Ohms): 4.7K · DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V · Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA · Current - Collector (Ic) (Max): 100mA · Frequency - Transition: 140MHz · Power - Max: 250mW · Transistor Type: NPN - Pre-Biased · Mounting Type: Surface Mount · Package / Case: SOT-323 | от 0,03 | Доп. информация Искать в поставщиках | |
BCR 112T E6327 | Infineon Technologies | TRANSISTOR NPN DGTL AF SC-75 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 4.7K · Resistor - Emitter Base (R2) (Ohms): 4.7K · DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V · Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA · Current - Collector (Ic) (Max): 100mA · Frequency - Transition: 140MHz · Power - Max: 250mW · Transistor Type: NPN - Pre-Biased · Mounting Type: Surface Mount · Package / Case: SC-75 | Доп. информация Искать в поставщиках |
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