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BCR 112 E6327 — TRANSISTOR NPN DGTL AF SOT-23
| Manufacturer | Infineon Technologies |
| Harmful substances |  RoHS  Lead-free |
 | | Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) (Ohms) | 4.7K |
| Resistor - Emitter Base (R2) (Ohms) | 4.7K |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector (Ic) (Max) | 100mA |
| Frequency - Transition | 140MHz |
| Power - Max | 200mW |
| Transistor Type | NPN - Pre-Biased |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23 |
| Found under name | BCR112E6327XT, SP000010747 |
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