Discrete Semiconductor Products · Transistors (BJT) - Single, Pre-Biased

Manufacturer	Infineon Technologies
Harmful substances	RoHS Lead-free

Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	2.2K
Resistor - Emitter Base (R2) (Ohms)	47K
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA
Current - Collector (Ic) (Max)	100mA
Frequency - Transition	170MHz
Power - Max	200mW
Transistor Type	NPN - Pre-Biased
Mounting Type	Surface Mount
Package / Case	SOT-23
Found under name	BCR108E6433XT, SP000010737

Photo	Name	Manufacturer	Technical parameters	Prices (rub.)	Buy
	BCR 108 B6327	Infineon Technologies	TRANSISTOR NPN DGTL SOT-23 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 2.2K · Resistor - Emitter Base (R2) (Ohms): 47K · DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V · Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA · Current - Collector (Ic) (Max): 100mA · Frequency - Transition: 170MHz · Power - Max: 200mW · Transistor Type: NPN - Pre-Biased · Mounting Type: Surface Mount · Package / Case: SOT-23	from 0,02	Additional information Find at suppliers
	BCR 108 E6327	Infineon Technologies	TRANSISTOR NPN DGTL SOT-23 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 2.2K · Resistor - Emitter Base (R2) (Ohms): 47K · DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V · Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA · Current - Collector (Ic) (Max): 100mA · Frequency - Transition: 170MHz · Power - Max: 200mW · Transistor Type: NPN - Pre-Biased · Mounting Type: Surface Mount · Package / Case: SOT-23	from 0,04 from 0,47	Additional information Find at suppliers

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