Discrete Semiconductor Products · Transistors (BJT) - Single, Pre-Biased

Manufacturer	Infineon Technologies
Harmful substances	RoHS Lead-free

Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	100K
Resistor - Emitter Base (R2) (Ohms)	100K
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector (Ic) (Max)	50mA
Frequency - Transition	100MHz
Power - Max	250mW
Transistor Type	NPN - Pre-Biased
Mounting Type	Surface Mount
Package / Case	SC-75
Found under name	BCR101TE6327XT, SP000014813

Photo	Name	Manufacturer	Technical parameters	Prices (rub.)	Buy
	BCR 101L3 E6327	Infineon Technologies	TRANSISTOR NPN 50V 50MA TSLP3-4 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 100K · Resistor - Emitter Base (R2) (Ohms): 100K · DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V · Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA · Current - Collector (Ic) (Max): 50mA · Frequency - Transition: 100MHz · Power - Max: 250mW · Transistor Type: NPN - Pre-Biased · Mounting Type: Surface Mount · Package / Case: TSLP-3-4		Additional information Find at suppliers

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