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Discrete Semiconductor Products  ·  Transistors (BJT) - Arrays, Pre-Biased
 
XP0621600L

- Dimensional Drawing
- Dimensional Drawing

XP0621600L — TRANS ARRAY NPN/NPN W/RES SMINI6

ManufacturerPanasonic - SSG
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)4.7K
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector (Ic) (Max)100mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition150MHz
Power - Max150mW
Transistor Type2 NPN - Pre-Biased (Dual)
Mounting TypeSurface Mount
Package / CaseS-Mini 6P
Found under nameXP0621600LDKR
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
XP0421600LXP0421600LPanasonic - SSGTRANS ARRAY NPN/NPN W/RES S MINI
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 4.7K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Frequency - Transition: 150MHz  ·  Power - Max: 150mW  ·  Transistor Type: 2 NPN - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: S-Mini 6P
from 0,14
from 0,48		Additional information
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Similar by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
XP0621000LXP0621000LPanasonic - SSGTRANS ARRAY NPN/NPN W/RES SMINI6
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Frequency - Transition: 150MHz  ·  Power - Max: 150mW  ·  Transistor Type: 2 NPN - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: S-Mini 6P
from 0,13
from 0,44		Additional information
Find at suppliers
XP0421500LXP0421500LPanasonic - SSGTRANS ARRAY NPN/NPN W/RES S MINI
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Frequency - Transition: 150MHz  ·  Power - Max: 150mW  ·  Transistor Type: 2 NPN - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: S-Mini 6P
from 0,14
from 0,48		Additional information
Find at suppliers
XP0121600LXP0121600LPanasonic - SSGTRANS ARRAY NPN/NPN W/RES S MINI
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 4.7K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Frequency - Transition: 150MHz  ·  Power - Max: 150mW  ·  Transistor Type: 2 NPN - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: S-mini
from 0,14
from 0,48		Additional information
Find at suppliers
XP0421000LXP0421000LPanasonic - SSGTRANS ARRAY NPN/NPN W/RES S MINI
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Frequency - Transition: 150MHz  ·  Power - Max: 150mW  ·  Transistor Type: 2 NPN - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: S-Mini 6P
from 0,10
from 0,13		Additional information
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