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Discrete Semiconductor Products  ·  Transistors (BJT) - Arrays, Pre-Biased

 
XN0621500L

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- Dimensional Drawing

XN0621500L — TRANS ARRAY NPN/NPN W/RES MINI6P

ManufacturerPanasonic - SSG
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)10K
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector (Ic) (Max)100mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition150MHz
Power - Max300mW
Transistor Type2 NPN - Pre-Biased (Dual)
Mounting TypeSurface Mount
Package / CaseMini 6P
Found under nameXN0621500LDKR
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
XN0421500LXN0421500LPanasonic - SSGTRANS ARRAY NPN/NPN W/RES MINI6P
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Frequency - Transition: 150MHz  ·  Power - Max: 300mW  ·  Transistor Type: 2 NPN - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: Mini 6P
from 0,08
from 0,11
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Similar by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
XN0121500LXN0121500LPanasonic - SSGTRANS ARRAY NPN/NPN W/RES MINI5P
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Frequency - Transition: 150MHz  ·  Power - Max: 300mW  ·  Transistor Type: 2 NPN - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: Mini 5P
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XN0421100LXN0421100LPanasonic - SSGTRANS ARRAY NPN/NPN W/RES MINI6P
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  Resistor - Emitter Base (R2) (Ohms): 10K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Frequency - Transition: 150MHz  ·  Power - Max: 300mW  ·  Transistor Type: 2 NPN - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: Mini 6P
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XN0621600LXN0621600LPanasonic - SSGTRANS ARRAY NPN/NPN W/RES MINI6P
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 4.7K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Frequency - Transition: 150MHz  ·  Power - Max: 300mW  ·  Transistor Type: 2 NPN - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: Mini 6P
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XN0621100LXN0621100LPanasonic - SSGTRANS ARRAY NPN/NPN W/RES MINI-6
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  Resistor - Emitter Base (R2) (Ohms): 10K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Frequency - Transition: 150MHz  ·  Power - Max: 300mW  ·  Transistor Type: 2 NPN - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: Mini 6P
from 0,13
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XN0421600LXN0421600LPanasonic - SSGTRANS ARRAY NPN/NPN W/RES MINI6P
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 4.7K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Frequency - Transition: 150MHz  ·  Power - Max: 300mW  ·  Transistor Type: 2 NPN - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: Mini 6P
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XN0421400LXN0421400LPanasonic - SSGTRANS ARRAY NPN/NPN W/RES MINI6P
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  Resistor - Emitter Base (R2) (Ohms): 2.1K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Frequency - Transition: 150MHz  ·  Power - Max: 300mW  ·  Transistor Type: 2 NPN - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: Mini 6P
from 0,12
from 0,42
Additional information
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XN0421000LXN0421000LPanasonic - SSGTRANS ARRAY NPN/NPN W/RES MINI6P
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Frequency - Transition: 150MHz  ·  Power - Max: 300mW  ·  Transistor Type: 2 NPN - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: Mini 6P
from 0,12
from 0,42
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Find at suppliers

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