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Discrete Semiconductor Products  ·  Transistors (BJT) - Arrays, Pre-Biased
 
UMB4NTN

- Dimensional Drawing

UMB4NTN — TRANS DUAL PNP 50V 100MA SOT-363

ManufacturerRohm Semiconductor
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)10K
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 1mA, 10mA
Current - Collector (Ic) (Max)100mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition250MHz
Power - Max150mW
Transistor Type2 PNP - Pre-Biased (Dual)
Mounting TypeSurface Mount
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
Found under nameUMB4NTNDKR
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
UMB8NTRRohm SemiconductorTRANS DUAL PNP 50V 100MA SOT-363
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Frequency - Transition: 250MHz  ·  Power - Max: 150mW  ·  Transistor Type: 2 PNP - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
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