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Discrete Semiconductor Products  ·  Transistors (BJT) - Arrays, Pre-Biased
 
PUMH9,135

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PUMH9,135 — TRANS NPN 50V 100MA SOT363

ManufacturerNXP Semiconductors
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)10K
Resistor - Emitter Base (R2) (Ohms)47K
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic100mV @ 250µA, 5mA
Current - Collector (Ic) (Max)100mA
Current - Collector Cutoff (Max)1µA
Power - Max300mW
Transistor Type2 NPN - Pre-Biased (Dual)
Mounting TypeSurface Mount
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
Found under namePUMH9 /T3, PUMH9 /T3-ND
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
PUMH9,115PUMH9,115NXP SemiconductorsTRANS NPN 50V 100MA SOT363
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 1µA  ·  Power - Max: 300mW  ·  Transistor Type: 2 NPN - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
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PUMH9,165PUMH9,165NXP SemiconductorsTRANS NPN 50V 100MA SOT363
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 1µA  ·  Power - Max: 300mW  ·  Transistor Type: 2 NPN - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
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Similar by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
PUMB9,115PUMB9,115NXP SemiconductorsTRANS NPN/PNP 50V 100MA SOT363
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 1µA  ·  Power - Max: 300mW  ·  Transistor Type: 2 PNP - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
from 0,03Additional information
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PUMD9,165PUMD9,165NXP SemiconductorsTRANS NPN/PNP 50V 100MA SOT363
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 1µA  ·  Power - Max: 300mW  ·  Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
from 0,03Additional information
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PUMD9,135PUMD9,135NXP SemiconductorsTRANS NPN/PNP 50V 100MA SOT363
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 1µA  ·  Power - Max: 300mW  ·  Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
from 0,03Additional information
Find at suppliers
PUMD9,115PUMD9,115NXP SemiconductorsTRANS NPN/PNP 50V 100MA SOT363
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 1µA  ·  Power - Max: 300mW  ·  Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
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PEMH9,115PEMH9,115NXP SemiconductorsTRANS NPN/NPN 50V 100MA SOT666
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 1µA  ·  Power - Max: 300mW  ·  Transistor Type: 2 NPN - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SS Mini-6 (SOT-666)
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PUMH9,125NXP SemiconductorsTRANS ARRAY NPN/NPN SOT-363
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 1µA  ·  Power - Max: 200mW  ·  Transistor Type: 2 NPN - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
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