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Photo | Name | Manufacturer | Technical parameters | Prices (rub.) | Buy |
PUMD20,115 | NXP Semiconductors | TRANS PREBIASED DUAL SOT666 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 2.2K · Resistor - Emitter Base (R2) (Ohms): 2.2K · DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V · Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA · Current - Collector (Ic) (Max): 100mA · Current - Collector Cutoff (Max): 1µA · Power - Max: 300mW · Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363 | from 0,06 | Additional information Find at suppliers | |
PUMB20,115 | NXP Semiconductors | TRANS PNP/PNP 50V 100MA SOT363 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 2.2K · Resistor - Emitter Base (R2) (Ohms): 2.2K · DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V · Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA · Current - Collector (Ic) (Max): 100mA · Current - Collector Cutoff (Max): 1µA · Power - Max: 300mW · Transistor Type: 2 PNP - Pre-Biased (Dual) · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363 | from 0,03 | Additional information Find at suppliers | |
PEMH20,115 | NXP Semiconductors | TRANS NPN W/RES DUAL SOT666 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 2.2K · Resistor - Emitter Base (R2) (Ohms): 2.2K · DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V · Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA · Current - Collector (Ic) (Max): 100mA · Current - Collector Cutoff (Max): 1µA · Power - Max: 300mW · Transistor Type: 2 NPN - Pre-Biased (Dual) · Mounting Type: Surface Mount · Package / Case: SS Mini-6 (SOT-666) | from 0,04 | Additional information Find at suppliers |
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