Discrete Semiconductor Products · Transistors (BJT) - Arrays, Pre-Biased

Manufacturer	NXP Semiconductors
Harmful substances	RoHS Lead-free

Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	2.2K
Resistor - Emitter Base (R2) (Ohms)	47K
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	100mV @ 250µA, 5mA
Current - Collector (Ic) (Max)	100mA
Current - Collector Cutoff (Max)	1µA
Power - Max	200mW
Transistor Type	2 NPN - Pre-Biased (Dual)
Mounting Type	Surface Mount
Package / Case	SC-70-6, SC-88, SOT-323-6, SOT-363

Photo	Name	Manufacturer	Technical parameters	Prices (rub.)	Buy
	PUMD10,125	NXP Semiconductors	TRANS ARRAY NPN/PNP SOT-363 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 2.2K · Resistor - Emitter Base (R2) (Ohms): 47K · DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V · Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA · Current - Collector (Ic) (Max): 100mA · Current - Collector Cutoff (Max): 1µA · Power - Max: 200mW · Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363	from 0,04	Additional information Find at suppliers
	PUMH10,115	NXP Semiconductors	TRANS NPN 50V 100MA SOT363 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 2.2K · Resistor - Emitter Base (R2) (Ohms): 47K · DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V · Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA · Current - Collector (Ic) (Max): 100mA · Current - Collector Cutoff (Max): 1µA · Power - Max: 300mW · Transistor Type: 2 NPN - Pre-Biased (Dual) · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363	from 0,03	Additional information Find at suppliers

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