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Discrete Semiconductor Products  ·  Transistors (BJT) - Arrays, Pre-Biased
 
MUN5116DW1T1G

MUN5116DW1T1G — TRANS BRT PNP DUAL 50V SOT-363

ManufacturerON Semiconductor
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)4.7K
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
Current - Collector (Ic) (Max)100mA
Current - Collector Cutoff (Max)500nA
Power - Max385mW
Transistor Type2 PNP - Pre-Biased (Dual)
Mounting TypeSurface Mount
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
MUN5116DW1T1MUN5116DW1T1ON SemiconductorTRANS BRT PNP DUAL 50V SOT-363
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 4.7K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Power - Max: 385mW  ·  Transistor Type: 2 PNP - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
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Similar by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
MUN5115DW1T1GMUN5115DW1T1GON SemiconductorTRANS BRT PNP DUAL 50V SOT-363
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Power - Max: 385mW  ·  Transistor Type: 2 PNP - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
from 0,05Additional information
Find at suppliers
MUN5216DW1T1GMUN5216DW1T1GON SemiconductorTRANS BRT NPN DUAL 50V SOT-363
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 4.7K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Power - Max: 385mW  ·  Transistor Type: 2 NPN - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
from 0,05Additional information
Find at suppliers
MUN5316DW1T1GON SemiconductorTRANS BRT DUAL 100MA 50V SOT-363
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 4.7K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Power - Max: 385mW  ·  Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
from 0,03
from 0,05		Additional information
Find at suppliers
MUN5133DW1T1MUN5133DW1T1ON SemiconductorTRANS BRT PNP DUAL 50V SOT-363
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 4.7K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Power - Max: 385mW  ·  Transistor Type: 2 PNP - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
from 0,12Additional information
Find at suppliers
MUN5133DW1T1GMUN5133DW1T1GON SemiconductorTRANS BRT PNP DUAL 50V SOT-363
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 4.7K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Power - Max: 385mW  ·  Transistor Type: 2 PNP - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
from 0,05Additional information
Find at suppliers
MUN5316DW1T1ON SemiconductorTRANS BRT DUAL 100MA 50V SOT-363
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 4.7K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Power - Max: 385mW  ·  Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
Additional information
Find at suppliers
MUN5216DW1T1MUN5216DW1T1ON SemiconductorTRANS BRT NPN DUAL 50V SOT-363
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 4.7K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Power - Max: 385mW  ·  Transistor Type: 2 NPN - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
Additional information
Find at suppliers

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