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Photo | Name | Manufacturer | Technical parameters | Prices (rub.) | Buy |
EMD6T2R | Rohm Semiconductor | TRANS PNP/NPN 50V 100MA EMT6 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 4.7K · DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V · Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA · Current - Collector (Ic) (Max): 100mA · Frequency - Transition: 250MHz · Power - Max: 150mW · Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) · Mounting Type: Surface Mount · Package / Case: EMT6 | from 0,11 from 0,46 | Additional information Find at suppliers | |
UMH3NTN | Rohm Semiconductor | TRANS DUAL NPN 50V 100MA SOT-363 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 4.7K · DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V · Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA · Current - Collector (Ic) (Max): 100mA · Frequency - Transition: 250MHz · Power - Max: 150mW · Transistor Type: 2 NPN - Pre-Biased (Dual) · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363 | from 0,06 from 0,08 | Additional information Find at suppliers | |
UMG3NTR | Rohm Semiconductor | TRANS DUAL NPN 50V 100MA SOT-353 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 4.7K · DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V · Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA · Current - Collector (Ic) (Max): 100mA · Frequency - Transition: 250MHz · Power - Max: 150mW · Transistor Type: 2 NPN - Pre-Biased (Dual) · Mounting Type: Surface Mount · Package / Case: SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP | from 0,08 | Additional information Find at suppliers |
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