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Discrete Semiconductor Products  ·  Transistors (BJT) - Arrays, Pre-Biased
 
EMH10T2R

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EMH10T2R — TRANS DUAL NPN 50V 100MA EMT6

ManufacturerRohm Semiconductor
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)22K
Resistor - Emitter Base (R2) (Ohms)22K
DC Current Gain (hFE) (Min) @ Ic, Vce56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector (Ic) (Max)100mA
Frequency - Transition250MHz
Power - Max150mW
Transistor Type2 NPN - Pre-Biased (Dual)
Mounting TypeSurface Mount
Package / CaseEMT6
Found under nameEMH10T2RCT
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
EMH1T2REMH1T2RRohm SemiconductorTRANS DUAL NPN 50V 30MA EMT6
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 22K  ·  Resistor - Emitter Base (R2) (Ohms): 22K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Frequency - Transition: 250MHz  ·  Power - Max: 150mW  ·  Transistor Type: 2 NPN - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: EMT6
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Similar by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
UMH1NTNUMH1NTNRohm SemiconductorTRANS DUAL NPN 50V 30MA SOT-363
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 22K  ·  Resistor - Emitter Base (R2) (Ohms): 22K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Frequency - Transition: 250MHz  ·  Power - Max: 150mW  ·  Transistor Type: 2 NPN - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
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UMH5NTRRohm SemiconductorTRANS DUAL NPN 50V 30MA SOT- 363
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 22K  ·  Resistor - Emitter Base (R2) (Ohms): 22K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Frequency - Transition: 250MHz  ·  Power - Max: 150mW  ·  Transistor Type: 2 NPN - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
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EMD2T2REMD2T2RRohm SemiconductorTRANS PNP/NPN 50V 30MA EMT6
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 22K  ·  Resistor - Emitter Base (R2) (Ohms): 22K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Frequency - Transition: 250MHz  ·  Power - Max: 150mW  ·  Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: EMT6
from 0,11
from 0,46		Additional information
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UMG1NTRUMG1NTRRohm SemiconductorTRANS DUAL NPN 50V 30MA SOT-353
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 22K  ·  Resistor - Emitter Base (R2) (Ohms): 22K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 500nA  ·  Frequency - Transition: 250MHz  ·  Power - Max: 150mW  ·  Transistor Type: 2 NPN - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
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