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Discrete Semiconductor Products  ·  Transistors (BJT) - Arrays, Pre-Biased

 

EMF5XV6T5 — TRANS BRT PNP PWR MNGMT SOT-563

ManufacturerON Semiconductor
Voltage - Collector Emitter Breakdown (Max)12V, 50V
Resistor - Base (R1) (Ohms)47K
Resistor - Emitter Base (R2) (Ohms)47K
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V / 270 @ 10mA, 2V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA / 250mV @ 10mA, 200mA
Current - Collector (Ic) (Max)100mA, 1A
Current - Collector Cutoff (Max)500nA
Power - Max500mW
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting TypeSurface Mount
Package / CaseSOT-563
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