Discrete Semiconductor Products  ·  Transistors (BJT) - Arrays, Pre-Biased

Voltage - Collector Emitter Breakdown (Max): 12V, 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  Resistor - Emitter Base (R2) (Ohms): 10K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V / 30 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA / 300mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA, 500mA  ·  Frequency - Transition: 250MHz, 260MHz  ·  Power - Max: 150mW  ·  Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: EMT6