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Discrete Semiconductor Products  ·  Transistors (BJT) - Arrays, Pre-Biased

 
EMD22T2R

EMD22T2R — TRANS PRE-BIASED 50V 100MA EMT6

ManufacturerRohm Semiconductor
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)4.7K
Resistor - Emitter Base (R2) (Ohms)47K
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector (Ic) (Max)100mA
Frequency - Transition250MHz
Power - Max150mW
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting TypeSurface Mount
Package / CaseEMT6
Found under nameQ2730364
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