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Discrete Semiconductor Products  ·  Transistors (BJT) - Arrays, Pre-Biased

 
DDA143TU-7

- Dimensional Drawing
- Dimensional Drawing

DDA143TU-7 — TRANS PREBIASED DUAL PNP SOT-363

ManufacturerDiodes Inc
Pay attentionEncapsulate Change 09/July/2007
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)4.7K
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 2.5mA
Current - Collector (Ic) (Max)100mA
Frequency - Transition250MHz
Power - Max200mW
Transistor Type2 PNP - Pre-Biased (Dual)
Mounting TypeSurface Mount
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
Found under nameDDA143TUDITR
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
DDA143TU-7-FDDA143TU-7-FDiodes IncTRANS PREBIASED DUAL PNP SOT363
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 4.7K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Frequency - Transition: 250MHz  ·  Power - Max: 200mW  ·  Transistor Type: 2 PNP - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
from 0,09
from 0,45
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Similar by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
DDC143TU-7DDC143TU-7Diodes IncTRANS PREBIASED DUAL NPN SOT-363
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 4.7K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Frequency - Transition: 250MHz  ·  Power - Max: 200mW  ·  Transistor Type: 2 NPN - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
from 0,13
from 0,47
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DCX143TU-7-FDCX143TU-7-FDiodes IncTRANS PREBIASED DUAL COMP SOT363
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 4.7K  ·  Resistor - Emitter Base (R2) (Ohms): 4.7K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Frequency - Transition: 250MHz  ·  Power - Max: 200mW  ·  Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
from 0,05
from 0,07
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DCX143TU-7DCX143TU-7Diodes IncTRANS PREBIASED DUAL COMP SOT363
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 4.7K  ·  Resistor - Emitter Base (R2) (Ohms): 4.7K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Frequency - Transition: 250MHz  ·  Power - Max: 200mW  ·  Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
from 0,11Additional information
Find at suppliers
DDC143TU-7-FDDC143TU-7-FDiodes IncTRANS PREBIASED DUAL NPN SOT363
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 4.7K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Frequency - Transition: 250MHz  ·  Power - Max: 200mW  ·  Transistor Type: 2 NPN - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
from 0,17
from 0,50
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