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Discrete Semiconductor Products  ·  Transistors (BJT) - Arrays, Pre-Biased
 
DDA113TU-7-F

DDA113TU-7-F — TRANS PREBIAS PNP 200MW SOT-363

ManufacturerDiodes Inc
Harmful substancesRoHS   Lead-free
Pay attentionEncapsulate Change 09/July/2007
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)1K
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 1mA, 10mA
Current - Collector (Ic) (Max)100mA
Frequency - Transition250MHz
Power - Max200mW
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting TypeSurface Mount
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
Similar by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
DDC113TU-7-FDiodes IncTRANS PREBIAS NPN 200MW SOT-363
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 1K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Frequency - Transition: 250MHz  ·  Power - Max: 200mW  ·  Transistor Type: 2 NPN - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
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