Discrete Semiconductor Products · Transistors (BJT) - Arrays, Pre-Biased

Manufacturer	Infineon Technologies
Harmful substances	RoHS Lead-free

Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	22K
Resistor - Emitter Base (R2) (Ohms)	22K
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA
Current - Collector (Ic) (Max)	100mA
Frequency - Transition	130MHz
Power - Max	250mW
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type	Surface Mount
Package / Case	SC-70-6, SC-88, SOT-323-6, SOT-363
Found under name	BCR22PNE6327XT, SP000010826

Photo	Name	Manufacturer	Technical parameters	Prices (rub.)	Buy
	BCR 22PN E6433	Infineon Technologies	TRANSISTOR ARRAY NPN/PNP SOT-363 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 22K · Resistor - Emitter Base (R2) (Ohms): 22K · DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V · Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA · Current - Collector (Ic) (Max): 100mA · Frequency - Transition: 130MHz · Power - Max: 250mW · Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363	from 0,05	Additional information Find at suppliers

Photo	Name	Manufacturer	Technical parameters	Prices (rub.)	Buy
	BCR 141S E6327	Infineon Technologies	TRANSISTOR NPN DGTL AF SOT-363 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 22K · Resistor - Emitter Base (R2) (Ohms): 22K · DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V · Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA · Current - Collector (Ic) (Max): 100mA · Frequency - Transition: 130MHz · Power - Max: 250mW · Transistor Type: 2 NPN - Pre-Biased (Dual) · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363	from 0,05	Additional information Find at suppliers

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