Discrete Semiconductor Products · Transistors (BJT) - Arrays, Pre-Biased

Manufacturer	Infineon Technologies
Harmful substances	RoHS Lead-free

Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	10K
Resistor - Emitter Base (R2) (Ohms)	10K
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA
Current - Collector (Ic) (Max)	100mA
Frequency - Transition	200MHz
Power - Max	250mW
Transistor Type	2 PNP - Pre-Biased (Dual)
Mounting Type	Surface Mount
Package / Case	SC-74-6
Found under name	SP000012552

Photo	Name	Manufacturer	Technical parameters	Prices (rub.)	Buy
	BCR 183S E6327	Infineon Technologies	TRANSISTOR PNP DGTL AF SOT-363 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 10K · Resistor - Emitter Base (R2) (Ohms): 10K · DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V · Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA · Current - Collector (Ic) (Max): 100mA · Frequency - Transition: 200MHz · Power - Max: 250mW · Transistor Type: 2 PNP - Pre-Biased (Dual) · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363	from 0,05	Additional information Find at suppliers
	BCR 183S E6433	Infineon Technologies	TRANSISTOR PNP DGTL AF SOT-363 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 10K · Resistor - Emitter Base (R2) (Ohms): 10K · DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V · Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA · Current - Collector (Ic) (Max): 100mA · Frequency - Transition: 200MHz · Power - Max: 250mW · Transistor Type: 2 PNP - Pre-Biased (Dual) · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363	from 0,05	Additional information Find at suppliers

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