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Discrete Semiconductor Products  ·  Transistors (BJT) - Arrays, Pre-Biased
 
BCR 148S E6433

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BCR 148S E6433 — TRANSISTOR NPN DGTL AF SOT-363

ManufacturerInfineon Technologies
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)47K
Resistor - Emitter Base (R2) (Ohms)47K
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector (Ic) (Max)70mA
Frequency - Transition100MHz
Power - Max250mW
Transistor Type2 NPN - Pre-Biased (Dual)
Mounting TypeSurface Mount
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
Found under nameBCR148SE6433XT, SP000012339
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
BCR 148S E6327BCR 148S E6327Infineon TechnologiesTRANSISTOR NPN DGTL AF SOT-363
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 47K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 70mA  ·  Frequency - Transition: 100MHz  ·  Power - Max: 250mW  ·  Transistor Type: 2 NPN - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
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